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10R3SS 数据表(PDF) 2 Page - Solid States Devices, Inc |
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10R3SS 数据表(HTML) 2 Page - Solid States Devices, Inc |
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2 / 2 page ![]() Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 2R3S THRU 20R3S Electrical Characteristics Symbol Max Units Instantaneous Forward Voltage Drop (IF=8A, TA=25 ºC, 300μsec pulse) VF 0.90 VDC Reverse Leakage Current (Rated VR, TA=25 ºC, 300μsec pulse minimum) IR1 100 μA Reverse Leakage Current (Rated VR, TA=100 ºC, 300μsec pulse minimum) IR2 2.0 mA Reverse Recovery Time (T A=25 ºC, IF = 0.5A, IR = 1.0A, IRR = 0.25A) tRR 35 nsec Typical Junction Capacitance (VR = 10VDC, TA = 25ºC, f = 1MHz) CJ 300 pF Notes: 1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C. Case Outline: DO-4 Stud: Cathode Lead: Anode NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0029D DOC |
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