G2SB2-E3SLASH51 datasheet(1/5 Pages) VISHAY

部件名	G2SB2-E3/51

功能描述	Glass Passivated Single-Phase Bridge Rectifier

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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G2SB20, G2SB60, G2SB80

www.vishay.com

Vishay General Semiconductor

Revision: 16-Aug-13

1

Document Number: 88603

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Glass Passivated Single-Phase Bridge Rectifier

FEATURES

• UL recognition file number E54214

• Ideal for printed circuit boards

• High surge current capability

• Typical IR less than 0.1 μA

• High case dielectric strength

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

General purpose use in AC/DC bridge full wave rectification

for monitor, TV, printer, SMPS, adapter, audio equipment,

and home appliances application.

MECHANICAL DATA

Case: GBL



Molding compound meets UL 94 V-0 flammability rating



Base P/N-E3 - RoHS-compliant, commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked on body

PRIMARY CHARACTERISTICS

Package

GBL

IF(AV)

1.5 A

VRRM

200 V, 600 V, 800 V

IFSM

80 A

IR

5 μA

VF at IF = 0.75 V

1.0 V

TJ max.

150 °C

Diode variations

In-Line

Case Type GBL

~

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

G2SB20

G2SB60

G2SB80

UNIT

Maximum repetitive peak reverse voltage

VRRM

200

600

800

V

Maximum RMS voltage

VRMS

140

420

560

V

Maximum DC blocking voltage

VDC

200

600

800

V

Maximum average forward rectified output current

at TA = 25 °C

IF(AV)

1.5

A

Peak forward surge current single sine-wave

superimposed on rated load

IFSM

80

A

Rating for fusing (t < 8.3 ms)

I2t27

A2s

Operating junction and storage temperature range

TJ, TSTG

- 55 to + 150

°C

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

G2SB20

G2SB60

G2SB80

UNIT

Maximum instantaneous forward

voltage drop per diode

0.75 A

VF

1.00

V

Maximum DC reverse current at

rated DC blocking voltage per diode

TA = 25 °C

IR

5.0

μA

TA = 125 °C

300

类似零件编号 - G2SB2-E3/51

制造商	部件名	数据表	功能描述
Vishay Siliconix	G2SB20	32Kb / 2P	Glass Passivated Single-Phase Bridge Rectifier 21-Mar-02
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Vishay Siliconix	G2SB20	26Kb / 2P	Glass Passivated Single-Phase Bridge Rectifier 21-Mar-02
Micro Commercial Compon...	G2SB20	144Kb / 3P	2 Amp Glass Passivated Single-Phase Rectifiers

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