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NHS010A 数据表(PDF) 39 Page - Renesas Technology Corp

部件名 NHS010A
功能描述  INTELLIGENT POWER DEVICE
PDF  41 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

NHS010A 数据表(HTML) 39 Page - Renesas Technology Corp

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PD166031AT1U
6. Application example in principle
R07DS1308EJ0100 Rev.1.00
Page 39 of 39
Oct. 30, 2015
6. Application example in principle
RIN, RSEN, RAN values are in range of 2k to 50k depending microcontroller while R_L value is typically 4k.
If necessary to raise HBM tolerated dose, adding resister between OUT terminal and Ground is effective. Resister’s
value is typically 100k
GND Network recommendation
RGND
Vbat
VCC
GND
VCC
GND
Vbat
In case of V_loaddump < 35V
In case of 35V < V_loaddump < 42V
External diode is recommended in order to
prevent reverse current toward control logic
part at reverse battery condition.
Note: If other component is installed to prevent reverse current at reverse battery condition,
diode is not required in GND Network.
Note: Approx. 1k
 additional resistor in parallel with the diode is recommended if Vf vaule of
the diode is high.
External diode and resistor are recommended
in order to prevent reverse current toward
control logic part at reverse battery condition
and limit the current through ZDAZ at load
dump condition. 100
 is recommended as
RGND.



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