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NHS010B 数据表(PDF) 5 Page - Renesas Technology Corp

部件名 NHS010B
功能描述  INTELLIGENT POWER DEVICE
PDF  41 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

NHS010B 数据表(HTML) 5 Page - Renesas Technology Corp

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PD166031AT1U
3. Specification
R07DS1308EJ0100 Rev.1.00
Page 5 of 39
Oct. 30, 2015
3.3 Absolute Maximum Ratings
Ta=25°C, unless other specified
Parameter
Symbol
Rating
Unit
Test Condition
Vcc Voltage
VCC
28
V
Vcc Voltage at reverse
battery condition
-VCC
-16
V
RL=2
, t<2min,
RIN=2k
, RSEN=2k, RIS=1k, RGND=100
GND Reverse current at
reverse battery condition
IGND(Rev)
200
mA
RL=2
, t<2min
Vcc voltage under Load
Dump condition
Vload dump
42
V
RI=1
, RL=2, RIS=1k, RIN=2k, RSEN=2k,
RGND=100
, td=400ms
Load Current
IL
Self limited
A
Total power dissipation
for whole device (DC)
PD
1.85
W
Ta=85°C,
Device on 50mm
50mm1.5mm epoxy PCB FR4
with 6 cm2 of 70
m copper area
Voltage at IN pin
VIN
-2 ~ 16
V
DC
RIN=2k
-16
At reverse battery condition, t<2min,
RIN=2k
, RSEN=2k
IN pin current
IIN
10
mA
DC
Voltage at IS pin
VIS
VCC
V
DC
RIS=1k
-16
V
At reverse battery condition, t<2min,
RL=2
, RIS=1k
IS Reverse current at
reverse battery condition
IIS(Rev)
-30
mA
At reverse battery condition, t<2min,
RL=2
Voltage at SEN pin
VSEN
-2 ~ 16
V
DC
RSEN=2k
-16
At reverse battery condition, t<2min
RIN=2k
, RSEN=2k
SEN pin current
ISEN
10
mA
DC
Channel Temperature
Tch
-40 to +150
°C
Storage Temperature
Tstg
-55 to +150
°C
ESD susceptibility
VESD
2000
V
HBM
AEC-Q100-002 std.
R=1.5k
, C=100pF
All pin
4000
IEC61000-4-2 std.
R=330
, C=150pF,
100nF at VCC and OUT
VCC, OUT
200
V
MM
AEC-Q100-003 std.
R=0
, C=200pF
Inductive load switch-off
energy dissipation single
pulse
EAS
170
mJ
VCC=13.5V, Tch,start<150°C, RL=2
Inductive load switch-off
energy dissipation
repetitive pulse
EAR
95
mJ
VCC=13.5V, Tch,start=85°C, RL=2
Remark) All voltages refer to ground pin of the device



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