| 数据搜索系统,热门电子元器件搜索 |
|
NHS008C 数据表(PDF) 30 Page - Renesas Technology Corp |
|
|
|||||||||||||||||||||||||||||
NHS008C 数据表(HTML) 30 Page - Renesas Technology Corp |
|
30 / 41 page ![]() µ PD166034T1U Datasheet 3. Specification R07DS1168EJ0200 Rev.2.00 Page 30 of 39 May 22, 2015 3.6.11 Reverse Battery Protection by turn on the output In case of a reverse battery is applied to the device, the N-ch MOSFET will turn on only if reverse current flow from GND pin. The reverse current through the N-ch MOSFET has to be limited by the connected load. IGND(rev) is limited internally approx. 2mA even without external RGND. Reverse current flow from IN, SEN, IS should be limited by external component such as recommendation value in Pin function, refer 3.2 Pin configuration. IPD uC RL VCC IS GND RIS RGND IN SEN OUT RIN RSEN IL(rev) N-ch MOSFET IGND(rev) 3.6.12 Measurement condition Switching waveform of OUT terminal VIN VOUT 90% 10% ton toff 30% 70% dV/dton -dV/dtoff 10% td(on) 90% td(off) 30% 70% |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |