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NHS030B 数据表(PDF) 39 Page - Renesas Technology Corp |
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NHS030B 数据表(HTML) 39 Page - Renesas Technology Corp |
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39 / 41 page ![]() µ PD166037T1J Datasheet 6. Application example in principle R07DS1114EJ0200 Rev.2.00 Page 39 of 39 May 22, 2015 6. Application example in principle RIN, RSEN, RAN values are in range of 2k to 50kohm depending microcontroller while R_L value is typically 4kohm. If necessary to raise HBM tolerated dose, adding resister between OUT terminal and Ground is effective. Resister’s value is typically 100kohm GND Network recommendation RGND Vbat VCC GND VCC GND Vbat In case of V_loaddump < 35V In case of 35V < V_loaddump < 42V External diode is recommended in order to prevent reverse current toward control logic part at reverse battery condition. Note: If other component is installed to prevent reverse current at reverse battery condition, diode is not required in GND Network. Note: Approx. 10kohm additional resistor in parallel with diode is recommended depends on Vf- If performance of the diode. External diode and resistor are recommended in order to prevent reverse current toward control logic part at reverse battery condition and limit the current through ZDAZ at load dump condition. 100ohm is recommended as RGND. |
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