DS-IX2113-R03

www.ixysic.com

1

Driver Characteristics

Features

with Absolute Maximum Rating of +700V

dV/dt Immune

Low-Side Outputs

Description

The IX2113 is a high voltage integrated circuit that can

drive high speed MOSFETs and IGBTs that operate at

up to +600V. The IX2113 is configured with

independent high-side and low-side referenced output

channels, both of which can source and sink 2A. The

floating high-side channel can drive an N-channel

power MOSFET or IGBT 600V from the common

reference.

Manufactured on IXYS Integrated Circuits Division's

proprietary high-voltage BCDMOS on SOI (silicon on

insulator) process, the IX2113 is extremely robust, and

is virtually immune to negative transients. The UVLO

circuit prevents the turn-on of the MOSFET or IGBT

Propagation delays are matched for use in high

frequency applications.

The IX2113 is available in a 14-pin DIP package and

in a 16-pin SOIC package.

Ordering Information

IX2113 Functional Block Diagram

Parameter

Rating

Units

600

V

2/2

A

10-20

V

113/100

ns

Delay Matching (Max)

20

ns

Part

Description

IX2113G

14-Pin DIP (25/Tube)

IX2113B

16-Pin SOIC (50/Tube)

IX2113BTR

16-Pin SOIC (1000/Reel)

Level

Shift

V

V

LS Delay

Control

Level

Shift

V

V

UVLO

High

Voltage

Level

Shift

UVLO

Pulse

Generator

R

R

S

Q

Buffer

V

DD

HIN

SD

LIN

V

SS

V

B

HO

V

S

V

CC

LO

COM

Input Control Logic

&

Cycle-by-Cycle

Edge-Triggered

Shutdown

Buffer

IX2113

600V High and Low Side

Gate Driver