BUZ76 datasheet(1/2 Pages) ISC

部件名	BUZ76

功能描述	High Input Impedance

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

BUZ76

DESCRIPTION

·3A,400V

·Drain Source Voltage-

: VDSS= 200V(Min)

·Static Drain-Source On-Resistance

: RDS(on) = 1.8Ω(Max)

·High Input Impedance

·Majority Carrier Device

APPLICATIONS

·switching regulators, switching converters

·motor drivers,relay drivers and drivers for high-power

Bipolar switching transistors reguiring high speed and

gate-driver power.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

400

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=37℃

3

A

Ptot

Total Dissipation@TC=25℃

40

W

Tj

Max. Operating Junction Temperature

-55-150

℃

Tstg

Storage Temperature Range

-55-150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

3.1

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

75

℃/W

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类似零件编号 - BUZ76

制造商	部件名	数据表	功能描述
Siemens Semiconductor G...	BUZ76	174Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
Intersil Corporation	BUZ76	42Kb / 5P	3A, 400V, 1.800 Ohm, N-Channel Power MOSFET October 1998
Infineon Technologies A...	BUZ76	140Kb / 9P	SIPMOS Power Transistor 07/96
Siemens Semiconductor G...	BUZ76A	172Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
Intersil Corporation	BUZ76A	42Kb / 5P	2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET October 1998

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