STPR1020CT datasheet(2/10 Pages) STMICROELECTRONICS

2 / 10 page

STPR1020CB/CG/CT/CF/CFP/CR

2/10

Symbol

Parameters

Test conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage

current

Tj = 25°C

VR =VRRM

µA

Tj = 100°C

0.6

VF**

Forward voltage

drop

Tj = 125

°CIF =5A

0.8

0.99

Tj = 125

°CIF =10A

0.95

1.20

Tj = 25°C

IF =10A

1.25

Pulse test : * tp=5ms,

δ <2%

** tp = 380

µs, δ <2%

To evaluate the conduction losses use the following equation :

P=0.78xIF(AV) + 0.042 x IF

(RMS)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Test conditions

Min.

Typ.

Max.

Unit

trr

Tj = 25°C

IF = 0.5A

IR =1A

Irr = 0.25A

tfr

Tj =25

°CIF =1A

VFR =1.1xVF max

dIF/dt=50A/

µs20

VFP

Tj =25

°CIF =1A

dIF/dt=50A/

µs3

RECOVERY CHARACTERISTICS

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

TO-220AB / D

2PAK / DPAK

2PAK

Per diode

4.0

°C/W

Total

2.4

ISOWATT220AB

Per diode

6.0

Total

4.0

TO-220FPAB

Per diode

6.5

Total

Rth (c)

Coupling

TO-220AB / D

2PAK / DPAK / I2PAK

0.7

ISOWATT220AB

2.0

TO-220FPAB

3.5

When diodes 1 and 2 are used simultaneously :

∆ Tj(diode 1) = P(diode 1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)

THERMAL RESISTANCES

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