BUZ21 datasheet(1/2 Pages) ISC

部件名	BUZ21

功能描述	Nanosecond Switching Speeds

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

BUZ21

DESCRIPTION

·19A, 100V

·RDS(ON) = 0.1Ω

·SOA is Power Dissipation Limited

·Nanosecond Switching Speeds

·Linear Transfer Characteristics

·High Input Impedance

·Majority Carrier Device

·Related Literature

APPLICATIONS

·This is an N-Channel enhancement mode silicon gate power

field effect transistor designed for applications such as

switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

100

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=37℃

19

A

Ptot

Total Dissipation@TC=25℃

75

W

Tj

Max. Operating Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.67

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

75

℃/W

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类似零件编号 - BUZ21

制造商	部件名	数据表	功能描述
Siemens Semiconductor G...	BUZ21	65Kb / 8P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
Intersil Corporation	BUZ21	46Kb / 6P	19A, 100V, 0.100 Ohm, N-Channel Power MOSFET October 1998
Infineon Technologies A...	BUZ21	90Kb / 8P	SIPMOS Power Transistor 05.99
Inchange Semiconductor ...	BUZ211	301Kb / 2P	isc N-Channel MOSFET Transistor
Siemens Semiconductor G...	BUZ213	180Kb / 6P	main ratings

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