BUZ36 datasheet(1/2 Pages) ISC

部件名	BUZ36

功能描述	SOA is Power Dissipation Limited

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

BUZ36

DESCRIPTION

·Static Drain-Source On-Resistance

: RDS(on) = 0.12Ω(Max)

·SOA is Power Dissipation Limited

APPLICATIONS

designed for applications such as switching regulators,

switching converters, motor drivers,relay drivers and

drivers for high power bipolar switching transistors

requiring high speed and low gate drive power.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

200

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=37℃

22

A

Ptot

Total Dissipation@TC=25℃

125

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

35

℃/W

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