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COP8SCR9IMT8 数据表(PDF) 13 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 COP8SCR9IMT8
功能描述  8-Bit CMOS Flash Based Microcontroller with 32k Memory, Virtual EEPROM and Brownout
PDF  80 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

COP8SCR9IMT8 数据表(HTML) 13 Page - National Semiconductor (TI)

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8.0 Electrical Characteristics (Continued)
DC Electrical Characteristics (−40˚C
≤ T
A ≤ +85˚C) (Continued)
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Parameter
Conditions
Min
Typ
Max
Units
Output Current Levels
D Outputs
Source
V
CC = 4.5V, VOH = 3.8V
−7
mA
V
CC = 2.7V, VOH = 1.8V
−4
mA
Sink (Note 7)
V
CC = 4.5V, VOL = 1.0V
10
mA
V
CC = 2.7V, VOL = 0.4V
3.5
mA
All Others
Source (Weak Pull-Up Mode)
V
CC = 4.5V, VOH = 3.8V
−10
µA
V
CC = 2.7V, VOH = 1.8V
−5
µA
Source (Push-Pull Mode)
V
CC = 4.5V, VOH = 3.8V
−7
mA
V
CC = 2.7V, VOH = 1.8V
−4
mA
Sink (Push-Pull Mode) (Note 7)
V
CC = 4.5V, VOL = 1.0V
10
mA
V
CC = 2.7V, VOL = 0.4V
3.5
mA
TRI-STATE Leakage
V
CC = 5.5V
−0.5
+0.5
µA
Allowable Sink Current per Pin
15
mA
Maximum Input Current without Latchup (Note
5)
±200
mA
RAM Retention Voltage, V
R (in HALT Mode)
2.0
V
Input Capacitance
7pF
Load Capacitance on D2
1000
pF
Voltage on G6 to Force Execution from Boot
ROM (Note 8)
G6 rise time must be slower
than 100 nS
2xV
CC
V
CC +7
V
G6 Rise Time to Force Execution from Boot
ROM
100
nS
Input Current on G6 when Input > V
CC
V
IN = 11V, VCC = 5.5V
500
µA
Flash Memory Data Retention
25˚C
100
yrs
Flash Memory Number of Erase/Write Cycles
See Table 13, Typical Flash
Memory Endurance
10
5
cycles
AC Electrical Characteristics (−40˚C
≤ T
A ≤ +85˚C)
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Parameter
Conditions
Min
Typ
Max
Units
Instruction Cycle Time (t
C)
Crystal/Resonator
4.5V
≤ V
CC
≤ 5.5V
0.5
DC
µs
2.7V
≤ V
CC < 4.5V
1.5
DC
µs
Flash Memory Page Erase Time
See Table 13, Typical
Flash Memory
Endurance
1ms
Flash Memory Mass Erase Time
8
ms
Frequency of MICROWIRE/PLUS in
Slave Mode
2
MHz
MICROWIRE/PLUS Setup Time (t
UWS)20
ns
MICROWIRE/PLUS Hold Time (t
UWH)20
ns
MICROWIRE/PLUS Output Propagation
Delay (t
UPD)
150
ns
Input Pulse Width
Interrupt Input High Time
1
t
C
Interrupt Input Low Time
1
t
C
www.national.com
13



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