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CPC7556 数据表(PDF) 4 Page - IXYS Corporation

部件名 CPC7556
功能描述  Monolithic Construction
PDF  6 Pages
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制造商  IXYS [IXYS Corporation]
网页  http://www.ixys.com
标志 IXYS - IXYS Corporation

CPC7556 数据表(HTML) 4 Page - IXYS Corporation

  CPC7556 Datasheet HTML 1Page - IXYS Corporation CPC7556 Datasheet HTML 2Page - IXYS Corporation CPC7556 Datasheet HTML 3Page - IXYS Corporation CPC7556 Datasheet HTML 4Page - IXYS Corporation CPC7556 Datasheet HTML 5Page - IXYS Corporation CPC7556 Datasheet HTML 6Page - IXYS Corporation  
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INTEGRATED CIRCUITS DIVISION
R04
www.ixysic.com
4
CPC7556
1.7 AC Electrical Characteristics
2
Typical Performance Data
Parameter
Conditions
Symbol
Minimum
Typical
Maximum
Units
Input Zero Bias Capacitance
V+  V= 0V
Measured from V~A to V~B
C~A~B
-4.4
12
pF
Output Zero Bias Capacitance
V~A = V~B
Measured from V+ to V
C+/
-8.3
20
pF
Bridge Zero Bias Capacitance
V+  V= 0V Measured from
V~A to V+/- and V~B to V+/-
C~A/+, C~A/,
C~B/+, C~B/
-8.5
12
pF
Thyristor Peak Pulse Discharge Energy
Single Event Over-Voltage
Discharge Energy
EPP
-
-
300
mJ
Thyristor Repeated Discharge Energy
Allowable Repeated Discharge
Energy, Rectified 60Hz
EAVE
--
14
mJ
2.8
2.6
2.4
2.0
1.8
1.6
-20
20
60
-40
0
40
80
Temperature (ºC)
Bridge Forward Voltage (V
F)
vs. Temperature
100
1.4
1.2
1.0
I
F=250mA
I
F=40mA
2.2
1.6
1.4
1.2
1.0
0.8
0.6
-20
20
60
-40
0
40
80
Temperature (ºC)
Diode Forward Voltage (V
F)
vs. Temperature
100
0.4
0.2
0
I
F=250mA
I
F=40mA
152
150
148
146
144
142
-20
20
60
-40
0
40
80
Temperature (ºC)
Diode Reverse Breakdown Voltage (V
RRM)
vs. Temperature
100
140
138
3.0
2.5
2.0
1.5
1.0
-20
20
60
-40
0
40
80
Temperature (ºC)
Gate Trigger Current
vs. Temperature
100
0.5
0
3.4
3.2
3.0
2.8
2.6
2.4
-20
20
60
-40
0
40
80
Temperature (ºC)
Gate Trigger Voltage
vs. Temperature
100
2.2
2.0



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