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CPC7556 数据表(PDF) 4 Page - IXYS Corporation |
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CPC7556 数据表(HTML) 4 Page - IXYS Corporation |
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4 / 6 page ![]() INTEGRATED CIRCUITS DIVISION R04 www.ixysic.com 4 CPC7556 1.7 AC Electrical Characteristics 2 Typical Performance Data Parameter Conditions Symbol Minimum Typical Maximum Units Input Zero Bias Capacitance V+ V = 0V Measured from V~A to V~B C~A~B -4.4 12 pF Output Zero Bias Capacitance V~A = V~B Measured from V+ to V C+/ -8.3 20 pF Bridge Zero Bias Capacitance V+ V = 0V Measured from V~A to V+/- and V~B to V+/- C~A/+, C~A/, C~B/+, C~B/ -8.5 12 pF Thyristor Peak Pulse Discharge Energy Single Event Over-Voltage Discharge Energy EPP - - 300 mJ Thyristor Repeated Discharge Energy Allowable Repeated Discharge Energy, Rectified 60Hz EAVE -- 14 mJ 2.8 2.6 2.4 2.0 1.8 1.6 -20 20 60 -40 0 40 80 Temperature (ºC) Bridge Forward Voltage (V F) vs. Temperature 100 1.4 1.2 1.0 I F=250mA I F=40mA 2.2 1.6 1.4 1.2 1.0 0.8 0.6 -20 20 60 -40 0 40 80 Temperature (ºC) Diode Forward Voltage (V F) vs. Temperature 100 0.4 0.2 0 I F=250mA I F=40mA 152 150 148 146 144 142 -20 20 60 -40 0 40 80 Temperature (ºC) Diode Reverse Breakdown Voltage (V RRM) vs. Temperature 100 140 138 3.0 2.5 2.0 1.5 1.0 -20 20 60 -40 0 40 80 Temperature (ºC) Gate Trigger Current vs. Temperature 100 0.5 0 3.4 3.2 3.0 2.8 2.6 2.4 -20 20 60 -40 0 40 80 Temperature (ºC) Gate Trigger Voltage vs. Temperature 100 2.2 2.0 |
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