DMP32D4S

Document number: DS35822 Rev. 4 - 2

2 of 6

www.diodes.com

November 2013

© Diodes Incorporated

DMP32D4S

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note 6)

300

250

mA

Pulsed Drain Current (Note 6)

-1

A

Characteristic

Symbol

Value

Units

Total Power Dissipation

(Note 5)

370

mW

(Note 6)

540

Thermal Resistance, Junction to Ambient

(Note 5)

348

°C/W

(Note 6)

241

Thermal Resistance, Junction to Case

(Note 6)

91

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

-30

—

—

V

—

—

-1

µA

Gate-Source Leakage

—

—

±10

µA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-1.4

-1.2

—

—

-2.4

-2.0

V

Static Drain-Source On-Resistance

—

—

2.4

Ω

4

Forward Transfer Admittance

—

6

—

S

Diode Forward Voltage

—

0.8

1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

51.16

—

pF

f = 1.0MHz

Output Capacitance

—

10.85

—

pF

Reverse Transfer Capacitance

—

8.88

—

pF

Gate Resistance

—

275

—

Ω

Total Gate Charge

—

0.6

—

nC

Total Gate Charge

—

1.2

—

nC

Gate-Source Charge

—

0.2

—

nC

Gate-Drain Charge

—

0.3

—

nC

Turn-On Delay Time

—

9.86

—

ns

Turn-On Rise Time

—

11.5

—

ns

Turn-Off Delay Time

—

31.8

—

ns

Turn-Off Fall Time

—

21.9

—

ns

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout

7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.