2SC1674 datasheet(1/1 Pages) TEL

部件名	2SC1674

功能描述	TO-92 Plastic-Encapsulated Transistors

PDF	1 Pages

Scroll/Zoom	100%

制造商	TEL [TRANSYS Electronics Limited]

网页	http://www.transyselectronics.com

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1 / 1 page

TO-92 Plastic-Encapsulate

d Transistors

2SC1674

TRANSISTOR (NPN)

FEATURE

Power dissipation

PCM:

0. 25 W (Tamb=25

℃)

Collector current

ICM:

0.02

A

Collector-base voltage

V(BR)CBO:

30

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= 100

µA , IE=0

30

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 1 mA, IB=0

20

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 100µA, IC=0

4

V

Collector cut-off current

ICBO

VCB= 30V, IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=3V ,

IC=0

0.1

µA

DC current gain

hFE

VCE=6 V, IC= 1mA

40

180

Collector-emitter saturation voltage

VCE(sat)

IC=10 mA, IB= 1 mA

0.3

V

Base-emitter voltage

VBE(ON)

VCE=6 V, IC= 1mA

0.72

V

Transition frequency

f T

VCE=6 V, IC= 1mA

400

MHz

Collector output capacitance

Cob

VCE=6V, IE=0, f=1MHz

1.5

pF

Noise figure

NF

VCE=6V, IC=1mA, f=100MHz,

RS=50Ω

5

dB

Power gain

GP

VCE=6V,IC=1mA,f=100MHz

18

dB

CLASSIFICATION OF hFE(1)

Rank

Y

GR

BL

Range

40-80

60-120

90-180

1 2 3

TO-92

1. EMITTER

2. COLLECTOR

3. BASE

.

Transys

Electronics

LI M ITE D

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