2SC1846 datasheet(1/4 Pages) PANASONIC

部件名	2SC1846

功能描述	Silicon NPN epitaxial planar type

PDF	4 Pages

Scroll/Zoom	100%

制造商	PANASONIC [Panasonic Semiconductor]

网页	http://www.panasonic.com/industrial/

标志

1 / 4 page

Power Transistors

1

Publication date: February 2003

SJD00094BED

2SC1846

Silicon NPN epitaxial planar type

For medium output power amplification

Complementary to 2SA0885

■ Features

• Low collector-emitter saturation voltage V

CE(sat)

• Output of 3 W can be obtained by a complementary pair with

2SA0885

• TO-126B package which requires no insulation plate for installa-

tion to the heat sink

■ Absolute Maximum Ratings T

a

= 25°C

■ Electrical Characteristics T

a

= 25°C ± 3°C

Unit: mm

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

VCBO

IC = 1 mA, IE = 045

V

Collector-emitter voltage (Base open)

VCEO

IC = 2 mA, IB = 035

V

Collector-base cutoff current (Emitter open)

ICBO

VCB

= 20 V, I

E

= 0

0.1

µA

Collector-emitter cutoff current (Base open)

ICEO

VCE = 20 V, IB = 0

100

µA

Emitter-base cutoff current (Collector open)

IEBO

VEB = 5 V, IC = 010

µA

Forward current transfer ratio

hFE1 *

VCE

= 10 V, I

C

= 500 mA

85

340



hFE2

VCE = 5 V, IC = 1 A

50

Collector-emitter saturation voltage

VCE(sat)

IC = 500 mA, IB = 50 mA

0.5

V

Transition frequency

fT

VCB

= 10 V, I

E

= −50 mA, f = 200 MHz

200

MHz

Collector output capacitance

Cob

VCB

= 10 V, I

E

= 0, f = 1 MHz

20

pF

(Common base, input open circuited)

1: Emitter

2: Collector

3: Base

TO-126B-A1 Package

8.0

+0.5

–0.1

3.2±0.2

0.75±0.1

0.5±0.1

2.3±0.2

4.6±0.2

0.5±0.1

1.76±0.1

123

φ 3.16±0.1

Rank

Q

R

S

hFE1

85 to 170

120 to 240

170 to 340

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

VCBO

45

V

Collector-emitter voltage (Base open)

VCEO

35

V

Emitter-base voltage (Collector open)

VEBO

5V

Collector current

IC

1A

Peak collector current

ICP

1.5

A

Collector power dissipation

PC

1.2

W

5.0 *

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

Note) *: With a 100

× 100 × 2 mm Al heat sink

类似零件编号 - 2SC1846

制造商	部件名	数据表	功能描述
Savantic, Inc.	2SC1846	131Kb / 4P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2SC1846	186Kb / 4P	Silicon NPN Power Transistors
Inchange Semiconductor ...	2SC1846	161Kb / 4P	Silicon NPN Power Transistors
Savantic, Inc.	2SC1846	132Kb / 4P	Silicon NPN Power Transistors
Foshan Blue Rocket Elec...	2SC1846	1Mb / 6P	Silicon NPN transistor in a TO-126F Plastic Package.

More results

类似说明 - 2SC1846

制造商	部件名	数据表	功能描述
Panasonic Semiconductor	2SD1752	57Kb / 3P	Silicon NPN epitaxial planar type
	UP04315	106Kb / 4P	Silicon NPN epitaxial planar type Silicon PNP epitaxial planar type
	2SC5848	438Kb / 3P	Silicon NPN epitaxial planar type
	XN06543	89Kb / 3P	Silicon NPN epitaxial planar type
Toshiba Semiconductor	2SC2347	150Kb / 4P	Silicon NPN Epitaxial Planar Type
Toshiba Semiconductor	2SC2290A	192Kb / 4P	SILICON NPN EPITAXIAL PLANAR TYPE
Guangdong Kexin Industr...	2SD1824	45Kb / 1P	Silicon NPN Epitaxial Planar Type
	2SD814	37Kb / 1P	Silicon NPN Epitaxial Planar Type
	2SC3125	35Kb / 1P	Silicon NPN Epitaxial Planar Type
	2SD1820A	46Kb / 1P	Silicon NPN Epitaxial Planar Type