DMN2016LHAB datasheet(1/6 Pages) DIODES

部件名	DMN2016LHAB

功能描述	Low On-Resistance

PDF	6 Pages

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制造商	DIODES [Diodes Incorporated]

网页	http://www.diodes.com

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1 / 6 page

DMN2016LHAB

Document number: DS36133 Rev. 5 - 2

1 of 6

www.diodes.com

July 2014

DMN2016LHAB

D1

S1

G1

Gate Protection

Diode

D2

S2

G2

Gate Protection

Diode

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V(BR)DSS

RDS(on)max

ID

TA = +25°C

20V

15.5m

Ω @ VGS = 4.5V

7.5A

16.5m

Ω @ VGS = 4.0V

7.3A

19m

Ω @ VGS = 3.1V

6.9A

20m

Ω @ VGS = 2.5V

6.7A

30m

Ω @ VGS = 1.8V

5.4A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (RDS(ON)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

•

Power Management Functions

•

Battery Pack

•

Load Switch

Features

•

Low On-Resistance

•

Low Gate Threshold Voltage

•

Low Input Capacitance

•

Fast Switching Speed

•

ESD Protected Gate

•

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

•

Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

•

Case: U-DFN2030-6

•

Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

•

Weight: 0.012 grams (approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMN2016LHAB-7

U-DFN2030-6

3,000 / Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

ESD PROTECTED TO 2kV

26W = Product Type Marking Code

YYWW = Date Code Marking

YY = Last digit of year (ex: 12 for 2012)

WW = Week code (01 to 53)

Top View

Pin Configuration

G2

S2

G1

S1

Bottom Drain Contact

D1/D2

26W

Bottom View

S1

G2

G1

S2

D1/D2

U-DFN2030-6

e4

类似零件编号 - DMN2016LHAB

制造商	部件名	数据表	功能描述
Diodes Incorporated	DMN2016LHAB	302Kb / 6P	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Rev 5
Diodes Incorporated	DMN2016LHAB	302Kb / 6P	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Rev 5

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