 |
数据搜索系统，热门电子元器件搜索 |
|
|
数据搜索系统，热门电子元器件搜索 |
|
2N5912 数据表(PDF) 1 Page - InterFET Corporation |
|
|
|||||||||||||||||||||||||||||
2N5912 数据表(HTML) 1 Page - InterFET Corporation |
|
|
1 / 1 page  01/99 B-23 2N5911, 2N5912 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C Continuous Forward Gate Current 50 mA Total Device Power Dissipation 500 mW Power Derating 4 mW°C Storage Temperature Range –65°C to + 200°C SOIC-8 Package See Section G for Outline Dimensions Pin Configuration 1 Source 1, 2 Drain 1, 3 Gate 1, 4 N/C, 5 Source 2, 6 Drain 2, 7 Gate 2, 8 Omitted TOÐ78 Package See Section G for Outline Dimensions Pin Configuration 1 Source 1, 2 Drain 1, 3 Gate 1, 4 Case, 5 Source 2, 6 Drain 2, 7 Gate 2, 8 Omitted Surface Mount SMP5911, SMP5912 At 25°C free air temperature: 2N5911 2N5912 Process NJ30L or NJ36D Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS – 25 – 25 V IG = – 1 µA, VDS = ØV Gate Reverse Current IGSS – 100 – 100 pA VGS = – 15V, VDS = ØV – 250 – 250 nA VGS = – 15V, VDS = ØV TA = 150°C Gate Operating Current IG – 100 – 100 pA VDG = 10V, ID = 5 mA – 100 – 100 nA VDG = 10V, ID = 5 mA TA = 125°C Gate Source Cutoff Voltage VGS(OFF) – 1– 5– 1– 5 V VDS = 10V, ID = 1 nA Gate Source Voltage VGS – 0.3 – 4 – 0.3 – 4 V VDS = 10V, ID = 5 mA Drain Saturation Current (Pulsed) IDSS 740740 mA VDS = 10V, VGS = ØV Dynamic Electrical Characteristics Common Source gfs 5000 10000 5000 10000 µS VDG = 10V, ID = 5 mA f = 1 kHz Forward Transconductance 5000 10000 5000 10000 µS VDG = 10V, ID = 5 mA f = 100 MHz Common Source gos 100 100 µS VDG = 10V, ID = 5 mA f = 1 kHz Output Conductance 150 150 µS VDG = 10V, ID = 5 mA f = 100 MHz Common Source Input Capacitance Ciss 55 pF VDG = 10V, ID = 5 mA f = 1 MHz Common Source Crss 1.2 1.2 pF VDG = 10V, ID = 5 mA f = 1 MHz Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage ¯eN 20 20 nV/ √Hz VDG = 10V, ID = 5 mA f = 10 kHz Noise Figure NF 1 1 dB VDG = 10V, ID = 5 mA f = 10 kHz RG = 100 KΩ Differential Gate Current IG1 – IG2 20 20 nA VDG = 10V, ID = 5 mA TA = 125°C Saturation Drain Current Ratio IDSS1 / IDSS2 0.95 1 0.95 1 VDG = 20V, VGS = ØV Differential Gate Source Voltage | VGS1 – VGS2 | 10 15 mV VDG = 10V, ID = 5 mA TA = 25°C, Gate Source Voltage ∆VGS1– VGS2 20 40 mV VDG = 10V, ID = 5 mA TB = 125°C Differential Drift ∆T TA = – 55°C, 20 40 mV VDG = 10V, ID = 5 mA TB = 25°C Transconductance Ratio gfs1 / gfs2 0.9 1 0.85 1 VDG = 10V, ID = 5 mA f = 1 kHz ¥ Wideband Differential Amplifiers 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/14/99 11:31 AM Page B-23 |
类似零件编号 - 2N5912 |
|
类似说明 - 2N5912 |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Chinese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
