IFN422 datasheet(1/1 Pages) INTERFET

部件名	IFN422

功能描述	Dual N-Channel Silicon Junction Field-Effect Transistor

PDF	1 Pages

Scroll/Zoom	100%

制造商	INTERFET [InterFET Corporation]

网页	http://www.interfet.com

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1 / 1 page

01/99

B-41

IFN421, IFN422, IFN423

Dual N-Channel Silicon Junction Field-Effect Transistor

Absolute maximum ratings at TA = 25¡C

Device Dissipation (Derate 3.2 mW/°C to 50°C)

400 mW

Total Device Dissipation (Derate 6 mW/°C to 150°C)

750 mW

Storage Temperature Range

– 65°C to 200°C

TOÐ78 Package

See Section G for Outline Dimensions

Pin Configuration

1 Source 1, 2 Drain 1, 3 Gate 1, 4 Case,

5 Source 2, 6 Drain 2, 7 Gate 2,

8 Omitted

At 25°C free air temperature:

IFN421, IFN422, IFN423

Process NJ01

Static Electrical Characteristics

Min

Typ

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

V(BR)GSS

– 40

– 60

V

IG = – 1 µA, VDS = ØV

Gate to Gate Breakdown Voltage

BVG1G2

±40

V

IG = – 1 µA, ID = ØA, IS = ØA

Gate Reverse Current

IGSS

– 1

pA

VGS = – 20V, VDS = ØV

– 1

nA

VGS = – 20V, VDS = ØV

TA = +125°C

Gate Operating Current

IG

– 0.25

pA

VDS = 10V, ID = 30 µA

– 250

pA

VDS = 10V, ID = 30 µA

TA = +125°C

Gate Source Cutoff Voltage

VGS(OFF)

– 0.4

– 2

V

VDS = 10V, ID = 1 nA

Gate Source Voltage

VGS

– 1.8

V

VDS = 10V, ID = 30 µA

Drain Saturation Current (Pulsed)

IDSS

60

1000

µA

VDS = 10V, VGS = Ø V

Dynamic Electrical Characteristics

Common Source Forward Transconductance

gfs

100

1500

µS

VDS = 10V, VGS = Ø V

f = 1 kHz

Common Source Output Conductance

gos

3µS

VDS = 10V, ID = 30 µA

f = 1 kHz

Common Source Input Capacitance

Ciss

3pF

VDS = 10V, VGS = Ø V

f = 1 MHz

Common Source Reverse Transfer Capacitance

Crss

1.5

pF

VDS = 10V, VGS = Ø V

f = 1 MHz

Equivalent Circuit Input Noise Voltage

¯eN

20

70

nV/

√Hz VDS = 10V, ID = 30 µA

f = 10 Hz

Noise Figure

NF

1

dB

VDS = 10V, ID = 30 µA

f = 10 Hz

RG = 10 MΩ

Max - IFN421 IFN422 IFN423

Differential Gate Source Voltage

|VGS1– VGS2|

10

15

25

mV

VDG = 10V, ID = 30 µA

Differential Gate Source Voltage

|VGS1– VGS2|

TA = – 55°C

10

25

40

µV/°C

VDG = 10V, ID = 30 µA

TB = 25°C

With Temperature

∆T

TC = 125°C

Min - IFN421 IFN422 IFN423

Common Mode Rejection Ratio

CMRR

90

80

dB

VDG = 10V to 20V, ID = 30 µA

¥ Very High Input Impedance

Differential Amplifiers

¥ Electrometers

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

www.interfet.com

Databook.fxp

1/14/99 12:22 PM

Page B-41

类似零件编号 - IFN422

制造商	部件名	数据表	功能描述
InterFET Corporation	IFN421	72Kb / 1P	Dual N-Channel Silicon Junction Field-Effect Transistor
	IFN423	72Kb / 1P	Dual N-Channel Silicon Junction Field-Effect Transistor
	IFN424	67Kb / 1P	Dual N-Channel Silicon Junction Field-Effect Transistor
	IFN425	67Kb / 1P	Dual N-Channel Silicon Junction Field-Effect Transistor
	IFN426	67Kb / 1P	Dual N-Channel Silicon Junction Field-Effect Transistor

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类似说明 - IFN422

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