IFN860 datasheet(1/1 Pages) INTERFET

部件名	IFN860

功能描述	Dual N-Channel Silicon Junction Field-Effect Transistor

PDF	1 Pages

Scroll/Zoom	100%

制造商	INTERFET [InterFET Corporation]

网页	http://www.interfet.com

标志

1 / 1 page

01/99

B-43

IFN860

Dual N-Channel Silicon Junction Field-Effect Transistor

Absolute maximum ratings at TA = 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage

– 20 V

Continuous Forward Gate Current

50 mA

Continuous Device Power Dissipation

400 mW

Power Derating

2.3 mW/°C

Storage Temperature Range

– 65°C to 200°C

TOÐ71 Package

Dimensions in Inches (mm)

Pin Configuration

1 Source, 2 Drain, 3 Gate, 5 Source,

6 Drain, 7 Gate

At 25°C free air temperature:

IFN860

Process NJ450L

Static Electrical Characteristics

Min

Typ

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

V(BR)GSS

– 20

V

IG = – 1 µA, VDS = ØV

Gate Reverse Leakage Voltage

IGSS

3nA

VGS = – 10V, VDS = ØV

Gate Source Cutoff Voltage

VGS(OFF)

– 0.3

– 3

V

VDS = 10V, ID = 100 µA

Drain Saturation Current (Pulsed)

IDSS

10

mA

VDS = 10V, VGS = Ø V

Differential Gate Source Voltage

|VGS1– VGS2|

25

mV

VDS = 10V, ID = 100 µA

Dynamic Electrical Characteristics

Transconductance

gm

25

40

mS

VDS = 10V, ID = – 10 mA

f = 1 kHz

Common Source Input Capacitance

Ciss

30

35

pF

VDS = 10V, ID = – 10 mA

f = 1 MHz

Common Source Reverse Transfer

Crss

17

20

pF

VDS = 10V, ID = – 10 mA

f = 1 MHz

Capacitance

Equivalent Short Circuit

¯eN

2

nV/

√Hz VDG = 3V, ID = 10 mA

f = 1 kHz

Input Noise Voltage

¥ Low-Noise Audio Amplifier

¥ Equivalent to Crystalonics

CD860

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

www.interfet.com

Databook.fxp

1/14/99 12:22 PM

Page B-43

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New Jersey Semi-Conduct...	IFN860	348Kb / 1P	Dual N-Channel Silicon Junction Field-Effect Transistor

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