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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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IFN5434 数据表(PDF) 1 Page - InterFET Corporation |
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IFN5434 数据表(HTML) 1 Page - InterFET Corporation |
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1 / 1 page  01/99 B-45 IFN5432, IFN5433, IFN5434 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage – 25 V Continuous Forward Gate Current 100 mA Continuous Device Power Dissipation 300 mW Power Derating 2.4 mW/°C TOÐ52 Package Dimensions in Inches (mm) Pin Configuration 1 Source, 2 Drain, 3 Gate & Case At 25°C free air temperature: IFN5432 IFN5433 IFN5434 Process NJ903 Static Electrical Characteristics Min Max Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS – 25 – 25 – 25 V IG = – 1µA, VDS = ØV Gate Reverse Current IGSS – 200 – 200 – 200 pA VGS = – 15V, VDS = ØV – 200 – 200 – 200 nA VGS = – 15V, VDS = ØV TA = 150°C Gate Source Cutoff Voltage VGS(OFF) – 4 – 10 – 3 – 9 – 1 – 4 V VDS = 5V, IG = 3 nA Drain Saturation Current (Pulsed) IDSS 150 100 30 mA VDS = 15V, VGS = ØV Drain Cutoff Current ID(OFF) 200 200 200 pA VDS = 5V, VGS = – 10V 200 200 200 nA VDS = 5V, VGS = – 10V TA = 150°C Drain Source ON Voltage VDS 50 70 100 mV VGS = ØV, ID = 10 mA Static Drain Source ON Resistance rDS(ON) 25 7 10 Ω VDS = ØV, ID = 10 mA Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) 57 10 Ω VGS = ØV, ID = ØA f = 1 kHz Common Source Input Capacitance Ciss 60 60 60 pF VDS = ØV, VGS = – 10V f = 1 MHz Common Source Reverse Crss 20 20 20 pF VDS = ØV, VGS = – 10V f = 1 MHz Transfer Capacitance Switching Characteristics Turn ON Delay Time td(on) 444 ns VDD = 1.5 V, VGS(ON) = ØV Rise Time tr 111 ns VGS(OFF) = – 12V, ID(ON) = 10 mA Turn OFF Delay Time td(off) 666 ns (IFN5432) RL = 145 Ω Fall Time tf 30 30 30 ns (IFN5433) RL = 143 Ω (IFN5433) RL = 140 Ω ¥ Analog Low On Resistance Switches ¥ Choppers 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-45 |
类似零件编号 - IFN5434 |
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类似说明 - IFN5434 |
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