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M29F800DB 数据表(PDF) 30 Page - STMicroelectronics |
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M29F800DB 数据表(HTML) 30 Page - STMicroelectronics |
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30 / 39 page  M29F800DT, M29F800DB 30/39 Table 23. CFI Query System Interface Information Note: 1. Not supported in the CFI Address Data Description Value x16 x8 1Bh 36h 0045h VCC Logic Supply Minimum Program/Erase voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV 4.5V 1Ch 38h 0055h VCC Logic Supply Maximum Program/Erase voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV 5.5V 1Dh 3Ah 0000h VPP [Programming] Supply Minimum Program/Erase voltage NA 1Eh 3Ch 0000h VPP [Programming] Supply Maximum Program/Erase voltage NA 1Fh 3Eh 0004h Typical timeout per single byte/word program = 2n µs 16µs 20h 40h 0000h Typical timeout for minimum size write buffer program = 2n µs NA 21h 42h 000Ah Typical timeout per individual block erase = 2n ms 1s 22h 44h 0000h Typical timeout for full chip erase = 2n ms see note (1) 23h 46h 0004h Maximum timeout for byte/word program = 2n times typical 256µs 24h 48h 0000h Maximum timeout for write buffer program = 2n times typical NA 25h 4Ah 0003h Maximum timeout per individual block erase = 2n times typical 8s 26h 4Ch 0000h Maximum timeout for chip erase = 2n times typical see note (1) |
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