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40N05 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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40N05 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor 40N05 ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA 50 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V VSD Diode Forward On-voltage IS= 40A ;VGS= 0 3.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 20A 0.035 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±500 nA IDSS Zero Gate Voltage Drain Current VDS=50V; VGS= 0 10 µA Ciss Input Capacitance VDS=25V; VGS=0V; fT=1MHz 5000 pF Crss Reverse Transfer capacitance 1000 Coss Output Capacitance 2500 tr Rise Time VGS=10V; ID=20A; VDD=25V; RG=50Ω 330 ns td(on) Turn-on Delay Time 100 tf Fall Time 360 td(off) Turn-off Delay Time 330 · PDF pdfFactory Pro www.fineprint.cn |
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