DMN3018SSS

Document number: DS35501 Rev. 5 - 2

4 of 6

www.diodes.com

February 2012

© Diodes Incorporated

DMN3018SSS

0

0.4

0.8

1.2

1.6

2.0

2.4

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

J

°

I= 1mA

D

I = 250µA

D

0

5

10

15

20

0

0.2

0.4

0.6

0.8

1.0

1.2

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Fig.8 Diode Forward Voltage vs. Current

T= 25°C

A

0

5

10

15

20

25

30

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typical Drain-Source Leakage Current vs. Voltage

1

10

100

1,000

10,000

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

0

5

10

15

20

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 10 Typical Junction Capacitance

10

100

1,000

C

iss

f = 1MHz

C

oss

02

4

6

8

10

12

14

16

Q

(nC)

g

Fig. 11 Gate Charge

, TOTAL GATE CHARGE

0

2

4

6

8

10

V

= 15V, I = A

DS

D

9