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L6229PD 数据表(PDF) 19 Page - STMicroelectronics |
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L6229PD 数据表(HTML) 19 Page - STMicroelectronics |
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19 / 25 page ![]() 19/25 L6229 4.1 OUTPUT CURRENT CAPABILITY AND IC POWER DISSIPATION In Figure 25 is shown the approximate relation between the output current and the IC power dissipation using PWM current control. For a given output current the power dissipated by the IC can be easily evaluated, in order to establish which package should be used and how large must be the on-board copper dissipating area to guarantee a safe op- erating junction temperature (125°C maximum). Figure 25. IC Power Dissipation versus Output Power. 4.2 THERMAL MANAGEMENT In most applications the power dissipation in the IC is the main factor that sets the maximum current that can be delivered by the device in a safe operating condition. Selecting the appropriate package and heatsinking con- figuration for the application is required to maintain the IC within the allowed operating temperature range for the application. Figures 26, 27 and 28 show the Junction-to-Ambient Thermal Resistance values for the PowerSO36, PowerDIP24 and SO24 packages. For instance, using a PowerSO package with copper slug soldered on a 1.5mm copper thickness FR4 board with 6cm2 dissipating footprint (copper thickness of 35 µm), the Rth(j-amb) is about 35°C/W. Figure 29 shows mounting methods for this package. Using a multi-layer board with vias to a ground plane, thermal impedance can be reduced down to 15°C/W. Figure 26. PowerSO36 Junction-Ambient thermal resistance versus on-board copper area. No PWM f SW = 30 kHz (slow decay) Test Condition s: Supply Voltage = 24 V 0 0.25 0.5 0.75 1 1.25 1.5 0 2 4 6 8 10 P I OUT [A] D [W] IOUT I1 I3 I2 IOUT IOUT 13 18 23 28 33 38 43 12 3 4 56 7 8 9 10 1 1 1 2 13 W ithout G round La yer W ith Gr ound La yer W ith Gr ound La yer + 16 via Ho le s sq . c m ºC / W On-Board Copper Area |
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