MP6754

2001-03-13 2/5

Characteristic

Symbol

Rating

Unit

Collector-emitter voltage

600

V

Gate-emitter voltage

± 20

V

DC

10

Collector current

1ms

20

A

DC

10

Forward current

1ms

20

A

Collector power dissipation (Tc = 25°C)

40

W

Junction temperature

150

°C

Storage temperature range

−40 ~ 125

°C

Isolation voltage

2500

(AC 1 minute)

V

Screw torque

―

1.5

N·m

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

―

―

± 500

nA

Collector cut-off current

―

―

1.0

mA

Gate-emitter cut-off voltage

6.0

―

9.0

V

Collector-emitter saturation voltage

―

3.0

4.0

V

Input capacitance

―

620

―

pF

Rise time

―

0.3

0.6

Turn-on time

―

0.4

0.8

Fall time

―

0.2

0.35

Switching time

Turn-off time

―

0.4

0.8

µs

Forward voltage

―

1.7

2.5

V

Reverse recovery time

di / dt = 100A / µs

―

0.08

0.15

µs

Transistor

―

―

3.09

Thermal resistance

Diode

―

―

3.09

°C / W

· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by

TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its

use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or

others.

· The information contained herein is subject to change without notice.

000707EAA2