DT430 datasheet(1/2 Pages) ISC

部件名	DT430

功能描述	Collector-Emitter Breakdown Voltage

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

1

isc Silicon NPN Darlington Power Transistor

DT430

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 300V(Min)

·

High DC Current Gain

: hFE= 2000(Min.)@ IC= 4A

·

Low Collector Saturation Voltage

: VCE(sat)= 3.0V(Max.)@ IC= 6A

APPLICATIONS

·

Switching for dynamotor excitation

·

General purpose power amplifier

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

400

V

VCEO

Collector-Emitter Voltage

300

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

10

A

IB

Base Current-Continuous

1

A

PC

Collector Power Dissipation

@ TC=25℃

100

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

类似零件编号 - DT430

制造商	部件名	数据表	功能描述
New Jersey Semi-Conduct...	DT430	70Kb / 2P	Silicon NPN Darlington Power Transistor

More results

类似说明 - DT430

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	3DD4515	207Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 400V(Min)
	2SB565	113Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= -50V(Min)
	3DD7A	191Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min)
	3DD7G	191Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 400V(Min)
	3DD8C	190Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 80V(Min)
	BD954	194Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= -100V(Min)
	BD956	194Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= -120V(Min)
	3DD8D	190Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 110V(Min)
	3DD8E	190Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 150V(Min)
	BUY78	194Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO = 300V(Min.)