FRM430 datasheet(1/2 Pages) ISC

部件名	FRM430

功能描述	Second Generation Rad Hard MOSFET Results

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

FRM430

DESCRIPTION

·3A, 500V, RDS(on) = 2.5

Ω

·Second Generation Rad Hard MOSFET Results

From New Design Concepts

APPLICATIONS

It is specially designed and processed to

exhibit minimal characteristic changes to total dose and neutron

exposures. Design and processing efforts are also directed to

enhance survival to heavy ion (SEE) and/or dose rate

(GAMMA DOT) exposure.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

500

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=37℃

3

A

Ptot

Total Dissipation@TC=25℃

125

W

Tj

Max. Operating Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.67

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

60

℃/W

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类似零件编号 - FRM430

制造商	部件名	数据表	功能描述
Intersil Corporation	FRM430D	48Kb / 6P	3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998
	FRM430H	48Kb / 6P	3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998
	FRM430R	48Kb / 6P	3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998

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类似说明 - FRM430

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