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M29F800D 数据表(PDF) 31 Page - STMicroelectronics

部件名 M29F800D
功能描述  8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory
PDF  39 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M29F800D 数据表(HTML) 31 Page - STMicroelectronics

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M29F800DT, M29F800DB
Table 24. Device Geometry Definition
Address
Data
Description
Value
x16
x8
27h
4Eh
0014h
Device Size = 2n in number of bytes
1 MByte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface Code description
x8, x16
Async.
2Ah
2Bh
54h
56h
0000h
0000h
Maximum number of bytes in multi-byte program or page = 2n
NA
2Ch
58h
0004h
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing
contiguous Erase Blocks of the same size.
4
2Dh
2Eh
5Ah
5Ch
0000h
0000h
Region 1 Information
Number of identical size erase block = 0000h+1
1
2Fh
30h
5Eh
60h
0040h
0000h
Region 1 Information
Block size in Region 1 = 0040h * 256 byte
16 Kbyte
31h
32h
62h
64h
0001h
0000h
Region 2 Information
Number of identical size erase block = 0001h+1
2
33h
34h
66h
68h
0020h
0000h
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
8 Kbyte
35h
36h
6Ah
6Ch
0000h
0000h
Region 3 Information
Number of identical size erase block = 0000h+1
1
37h
38h
6Eh
70h
0080h
0000h
Region 3 Information
Block size in Region 3 = 0080h * 256 byte
32 Kbyte
39h
3Ah
72h
74h
000Eh
0000h
Region 4 Information
Number of identical-size erase block = 000Eh+1
15
3Bh
3Ch
76h
78h
0000h
0001h
Region 4 Information
Block size in Region 4 = 0100h * 256 byte
64 Kbyte



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