CS5211GD14 datasheet(4/16 Pages) ONSEMI

4 / 16 page

CS5211

http://onsemi.com

ELECTRICAL CHARACTERISTICS (continued) (–40

°C < TA < 85°C; –40°C < TJ < 125°C; 4.5 V < VCC, VC < 14 V;

7.0 V < BST < 20 V; CGATE(H) = CGATE(L) = 3.3 nF; ROSC = 51 k; CCOMP = 0.1 µF, unless otherwise specified.)

Characteristic

Unit

Max

Typ

Min

Test Conditions

Overcurrent Protection

OVC Comparator Offset Voltage

0 V < IS+ < VCC, 0 V < IS– < VCC

IS+ Bias Current

0 V < IS+ < VCC

–1.0

0.1

1.0

µA

IS– Bias Current

0 V < IS– < VCC

–1.0

0.1

1.0

µA

COMP Discharge Threshold

–

0.20

0.25

0.30

COMP Discharge Current in OVC

Fault Mode

COMP = 1.0 V

2.0

5.0

8.0

µA

PWM Comparator

Transient Response

COMP = 0 – 1.5 V, VFFB, 20 mV overdrive

–

100

200

PWM Comparator Offset

VFB = VFFB = 0 V; Increase COMP until

GATE(H) starts switching

0.425

0.475

0.525

Artificial Ramp

Duty Cycle = 90%

100

VFFB Bias Current

VFFB = 0 V

–

0.1

1.0

µA

VFFB Input Range

Note 3.

–

1.1

Minimum Pulse Width

–

200

Oscillator

Switching Frequency

ROSC = 18 k

600

750

900

kHz

Switching Frequency

ROSC = 51 k

240

300

360

kHz

Switching Frequency

ROSC = 96 k

120

150

180

kHz

ROSC Voltage

–

1.21

1.25

1.29

General Electrical Specifications

VCC Supply Current

COMP = 0 V (no switching)

–

5.0

8.0

BST/VC Supply Current

COMP = 0 V (no switching)

–

2.0

3.0

Start Threshold

GATE(H) Switching, COMP Charging

3.90

4.05

4.20

Stop Threshold

GATE(H) Not Switching, COMP Not Charging

3.75

3.90

4.05

Hysteresis

Start–Stop

100

150

200

Sense Ground Current

Note 3.

–

0.15

1.00

3. Recommended maximum operating voltage between the three grounds is 200 mV.

CS5211GD14 数据表(PDF) 4 Page - ON Semiconductor

CS5211GD14 数据表(HTML) 4 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

数据表下载

链接网址

CS5211GD14 数据表(PDF) 4 Page - ON Semiconductor

CS5211GD14 数据表(HTML) 4 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

数据表 下载

链接网址

数据表下载