4/5

XL0840

0

1

2

3

4

5

0.10

1.00

10.00

Rgk(k )

Ω

Tj=125°C

VD=270V

dV/dt [Rgk] / dV/dt [Rgk=1k ]

Ω

Fig. 6: Relative variation of dV/dt immunity versus

gate-cathode resistance (typical values).

0

1

2

3

4

5

6

7

8

9

10

1.00

10.00

Cgk(nF)

Tj=125°C

VD=270V

Rgk=1kW

dV/dt [Cgk] / dV/dt [Rgk=1k ]

Ω

Fig. 7: Relative variation of dV/dt immunity versus

gate-cathode capacitance (typical values).

0

1

2

3

4

5

6

7

8

1

10

100

1000

Number of cycles

Non repetitive

Tj initial=25°C

Repetitive

Tlead=50°C

tp=10ms

ITSM(A)

Fig. 8: Surge peak on-state current versus number

of cycles.

0.1

1.0

10.0

100.0

0.01

0.10

1.00

10.00

tp(ms)

Tj initial=25°C

ITSM

I²t

ITSM(A), I t (A s)

22

Fig. 9: Non repetitive surge peak on-state current

for a sinusoidal pulse with width tp<10ms, and cor-

responding value of I

0.01

0.10

1.00

10.00

01

23

45

6

VTM(V)

Tj=25°C

Tj=125°C

Tj max. :

Vto = 1.00 V

Rd = 600 m

Ω

ITM(A)

Fig. 10: On-state characteristics (maximum val-

ues).