DMP32D4SFB

Document number: DS36161 Rev. 2 - 2

2 of 6

www.diodes.com

March 2013

© Diodes Incorporated

DMP32D4SFB

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note 5)

-400

-300

mA

Continuous Drain Current (Note 6)

-500

-400

mA

Pulsed Drain Current (Note 5)

-1

A

Maximum Body Diode continuous Current

-800

mA

Characteristic

Symbol

Value

Units

Total Power Dissipation

(Note 5)

0.5

W

(Note 6)

1.2

Thermal Resistance, Junction to Ambient

(Note 5)

273

°C/W

(Note 6)

105

Operating and Storage Temperature Range

-55 to 150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

-30

-

-

V

-

-

-1

µA

Gate-Source Leakage

-

-

±10

µA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-1.3

-

-2.3

V

Static Drain-Source On-Resistance

-

-

2.4

Ω

4

16

Forward Transfer Admittance

-

6

-

S

Diode Forward Voltage

-

0.8

1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

-

51

-

pF

f = 1.0MHz

Output Capacitance

-

11

-

pF

Reverse Transfer Capacitance

-

9

-

pF

Total Gate Charge

-

0.6

-

nC

Total Gate Charge

-

1.3

-

nC

Gate-Source Charge

-

0.2

-

nC

Gate-Drain Charge

-

0.2

-

nC

Turn-On Delay Time

-

3.6

-

ns

Turn-On Rise Time

-

8.5

-

ns

Turn-Off Delay Time

-

31.3

-

ns

Turn-Off Fall Time

-

20.2

-

ns

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout

7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.