2SC2522 datasheet(2/2 Pages) ISC

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isc Silicon NPN Power Transistor

2SC2522

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 1mA; RBE= ∞

120

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 50μ A; IE= 0

120

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 50μ A ; IC= 0

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 5A; IB= 0.5A

1.8

VBE(on)

Base-Emitter On Voltage

IC= 5A; VCE= 5V

1.7

ICBO

Collector Cutoff Current

VCB= 120V ; IE= 0

μ A

ICEO

Collector Cutoff Current

VCE= 120V ;RBE= ∞

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

μ A

hFE-1

DC Current Gain

IC= 1A; VCE= 5V

200

hFE-2

DC Current Gain

IC= 7A; VCE= 5V

COB

Output Capacitance

IE= 0; VCB= 10V; f= 1.0MHz

180

Current-Gain

—Bandwidth Product

IC= 1A; VCE= 10V; f= 10MHz

MHz

Switching Times

Rise Time

IC= 7.5A; IB1= -IB2= 0.75A;

RL= 4Ω

0.3

μ s

tstg

Storage Time

1.3

μ s

Fall Time

0.2

μ s

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