IRF221 datasheet(1/2 Pages) ISC

部件名	IRF221

功能描述	High Speed Applications

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

IRF221

DESCRIPTION

·Drain Current ID=5A@ TC=25℃

·Drain Source Voltage-

: VDSS= 150V(Min)

·Static Drain-Source On-Resistance

: RDS(on) =0.8Ω(Max)

·High Speed Applications

APPLICATIONS

·Switching power supplies

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

150

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=25℃

5

A

Ptot

Total Dissipation@TC=25℃

40

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

3.12

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

30

℃/W

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类似零件编号 - IRF221

制造商	部件名	数据表	功能描述
Samsung semiconductor	IRF221	209Kb / 5P	N-CHANNEL POWER MOSFETS
Fairchild Semiconductor	IRF221	165Kb / 5P	N-Channel Power MOSFETs, 7A, 150-200V
Intersil Corporation	IRF221	68Kb / 7P	4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs October 1997
New Jersey Semi-Conduct...	IRF221	135Kb / 3P	Nanosecond Switching Speeds
ARTSCHIP ELECTRONICS CO...	IRF221	154Kb / 5P	N-Channel Power Mosfets

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