IRF247 datasheet(2/2 Pages) ISC

部件名	IRF247

功能描述	Static Drain-Source On-Resistance

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

isc N-Channel MOSFET Transistor

IRF247

·ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYPE

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0; ID=250µA

275

VGS(TH)

Gate Threshold Voltage

VDS= VGS; ID=250µA

RDS(ON)

Drain-Source On-stage Resistance

VGS=10V; ID=8A

0.34

IGSS

Gate Source Leakage Current

VGS=±20V;VDS=0

±100

IDSS

Zero Gate Voltage Drain Current

VDS=220V; VGS=0

250

VSD

Diode Forward Voltage

IS=13A; VGS=0

1.8

Ciss

Input Capacitance

VDS=25V;

VGS=0V;

fT=1MHz

1300

Crss

Reverse Transfer Capacitance

Coss

Output Capacitance

320

Rise Time

RGS=9.1Ω

ID=14A;

VDD=125V;

RL=8.9Ω

100

td(on)

Turn-on Delay Time

Fall Time

td(off)

Turn-off Delay Time

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