IRF253 datasheet(2/2 Pages) ISC

部件名	IRF253

功能描述	Nanosecond Switching Speed

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

isc N-Channel MOSFET Transistor

IRF253

·ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYPE

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0; ID=250µA

150

VGS(TH)

Gate Threshold Voltage

VDS= VGS; ID=250µA

RDS(ON)

Drain-Source On-stage Resistance

VGS=10V; ID=16A

0.12

IGSS

Gate Source Leakage Current

VGS=±20V;VDS=0

±100

IDSS

Zero Gate Voltage Drain Current

VDS=150V; VGS=0

250

VSD

Diode Forward Voltage

IS=25A; VGS=0

2.0

Ciss

Input Capacitance

VDS=25V;

VGS=0V;

fT=1MHz

2000

3000

Crss

Reverse Transfer Capacitance

300

500

Coss

Output Capacitance

800

1200

Rise Time

ID=16A;

VDD=95V;

RL=4.7Ω

100

td(on)

Turn-on Delay Time

Fall Time

100

td(off)

Turn-off Delay Time

125

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