2SC1252 datasheet(1/1 Pages) ASI

部件名	2SC1252

功能描述	2SC1252

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制造商	ASI [Advanced Semiconductor]

网页	http://www.advancedsemiconductor.com

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A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS TC = 25 °C

SYMBOL

TEST CONDITIONS

MINIMUM

TYPICAL

MAXIMUM

UNITS

BVCEO

IC = 5.0 mA

25

V

BVCBO

IC = 100

µA

45

V

ICBO

VCE = 30 V

100

nA

IEBO

VEB = 2.0 V

500

nA

hFE

VCE = 10 V

IC = 50 mA

20

200

---

ft

VCE = 15 V

IC = 15 mA

f = 200 MHz

VCE = 15 V

IC = 70 mA

1200

1400

MHz

COB

VCB = 15 V

f = 1.0 MHz

3.0

pF

GPE

VCE = 15 V

IC = 50 mA

f = 200 MHz

15

17

dB

NF

VCE = 15 V

IC = 30 mA

f = 200 MHz

3.0

4.0

dB

NPN SILICON HIGH FREQUENCY TRANSISTOR

2SC1252

DESCRIPTION:

The

2SC1252 is a High Frequency

Transistor, Designed for Wide Band

Amplifier Applications up to 500 MHz.

FEATURES INCLUDE:

• High Gain -17 dB Typ. @ 200 MHz

• Low NF - 3.0 dB Typ. @ 200 MHz

• Hermetic TO-39 Package

MAXIMUM RATINGS

IC

400 mA

VCB

45 V

VCE

25 V

PDISS

5 W @ TC = 25 °C

TJ

-65 to +200 °C

TSTG

-65 to +200 °C

θθθθ

JC

35 °C/W

PACKAGE STYLE TO-39

1 = Emitter

2 = Base

3 & 4 = Collector (Case)

类似零件编号 - 2SC1252

制造商	部件名	数据表	功能描述
Advanced Semiconductor	2SC1251	40Kb / 2P	NPN SILICON RF POWER TRANSISTOR REV. A

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