IRF323 datasheet(1/2 Pages) ISC

部件名	IRF323

功能描述	isc N-Channel MOSFET Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

IRF323

DESCRIPTION

·Drain Current ID=2.8A@ TC=25℃

·Drain Source Voltage-

: VDSS= 350V(Min)

·Static Drain-Source On-Resistance

: RDS(on) =2.5Ω(Max)

APPLICATIONS

·Switching power supplies

·Switching converters,motor driver,relay driver

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

350

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=25℃

2.5

A

Ptot

Total Dissipation@TC=25℃

40

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

3.12

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

30

℃/W

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类似零件编号 - IRF323

制造商	部件名	数据表	功能描述
Samsung semiconductor	IRF323	213Kb / 5P	N-CHANNEL POWER MOSFETS
Fairchild Semiconductor	IRF323	164Kb / 5P	N-Channel Power MOSFETs, 3.0 A, 350-400 V
Intersil Corporation	IRF323	67Kb / 7P	2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs July 1998
New Jersey Semi-Conduct...	IRF323	137Kb / 3P	2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs
ARTSCHIP ELECTRONICS CO...	IRF323	333Kb / 6P	N-Channel Power MOSFETs

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