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DP8212 数据表(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 DP8212
功能描述  8-Bit Input/Output Port
PDF  10 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

DP8212 数据表(HTML) 2 Page - National Semiconductor (TI)

  DP8212 Datasheet HTML 1Page - National Semiconductor (TI) DP8212 Datasheet HTML 2Page - National Semiconductor (TI) DP8212 Datasheet HTML 3Page - National Semiconductor (TI) DP8212 Datasheet HTML 4Page - National Semiconductor (TI) DP8212 Datasheet HTML 5Page - National Semiconductor (TI) DP8212 Datasheet HTML 6Page - National Semiconductor (TI) DP8212 Datasheet HTML 7Page - National Semiconductor (TI) DP8212 Datasheet HTML 8Page - National Semiconductor (TI) DP8212 Datasheet HTML 9Page - National Semiconductor (TI) Next Button
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Absolute Maximum Ratings
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
Storage Temperature
b
65 Cto a160 C
All Output or Supply Voltages
b
05V to a7V
All Input Voltages
b
10V to 55V
Output Currents
125 mA
Maximum Power Dissipation at 25 C
Cavity Package
1903 mW
Molded Package
2005 mW
Derate cavity package 127 mW C above 25 C derate molded package
160 mW C above 25 C
Operating Conditions
Min
Max
Units
Supply Voltage (VCC)
DP8212M
450
550
VDC
DP8212
475
525
VDC
Operating Temperaure (TA)
DP8212M
b
55
a
125
C
DP8212
0
a
75
C
Note
Maximum ratings indicate limits beyond which perma-
nent damage may occur Continuous operation at these lim-
its is not intended and should be limited to those conditions
specified under DC electrical characteristics
Electrical Characteristics Min s TA s Max Min s VCC s Max unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
IF
Input Load Current
VF e 045V
b
025
mA
STB DS2 CLR DI1–DI8 Inputs
IF
Input Load Current MD Input
VF e 045V
b
075
mA
IF
Input Load Current DS1 Input
VF e 045V
b
10
mA
IR
Input Leakage Current
VR e VCC Max
10
m
A
STB DS2 CLR DI1–DI8 Inputs
IR
Input Leakage Current MD Input
VR e VCC Max
30
m
A
IR
Input Leakage Current DS1 Input
VR e VCC Max
40
m
A
VC
Input Forward Voltage Clamp
IC eb5mA
b
1V
VIL
Input ‘‘Low’’ Voltage
DP8212M
008
V
DP8212
085
V
VIH
Input ‘‘High’’ Voltage
20
V
VOL
Output ‘‘Low’’ Voltage
IOL e 10 mA
DP8212M
045
V
IOL e 15 mA
DP8212
045
V
VOH
Output ‘‘High’’ Voltage
IOH e 05 mA
DP8212M
340
40
V
IOH e 10 mA
DP8212
365
40
V
ISC
Short-Circuit Output Current
VO e 0V VCC e 5V
b
15
b
75
mA
lIOl
Output Leakage Current High
VO e 045VVCC Max
20
m
A
Impedance State
ICC
Power Supply Current
DP8212M
90
145
mA
DP8212
90
130
mA
Capacitance F e 1 MHz VBIAS e 25V VCC e 5V TA e 25 C
Symbol
Parameter
Min
Typ
Max
Units
CIN
DS1 MD Input Capacitance
9
12
pF
CIN
DS2 CLR STB DI1–DI8 Input Capacitance
5
9
pF
COUT
DO1 – DO8 Output Capacitance
8
12
pF
This parameter is sampled and not 100% tested
2



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