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Supply Voltage

7V

15V

Input Voltage

b

Storage Temperature Range

b

Maximum Power Dissipation at 25 C

Cavity Package

1509 mW

Molded Package

1476 mW

Lead Temperature (Soldering 4 seconds)

260 C

Derate cavity package 101 mW C above 25 C derate molded package

118 mW C above 25 C

Operating Conditions

Min

Max

Units

Supply Voltage

475

525

V

114

126

V

a

70

C

Symbol

Parameter

Conditions

Min

Typ

Max

Units

Input Current Loading

b

025

mA

Input Leakage Current

10

m

A

Input Forward Clamp Voltage

b

10

V

Input ‘‘Low’’ Voltage

08

V

Input ‘‘High’’ Voltage

RESIN Input

26

V

All Other Inputs

20

V

RESIN Input Hysteresis

025

V

Output ‘‘Low’’ Voltage

(w1 w2) Ready Reset STSTB

045

V

Osc w2 (TTL)

045

V

Osc w2 (TTL)

045

V

Output ‘‘High’’ Voltage

w

94

V

Ready Reset

36

V

Osc w2 (TTL) STSTB

24

V

Output Short-Circuit Current

(All Low Voltage Outputs Only)

b

10

b

60

mA

(Note 1)

Power Supply Current

115

mA

Power Supply Current

12

mA

Note 1

Note 2

‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed Except for ‘‘Operating Temperature Range’’

they are not meant to imply that the devices should be operated at these limits The table of ‘‘Electrical Characteristics’’ provides conditions for actual device

operation

Note 3

Crystal Requirements

Tolerance

Resonance

Fundamental

Load Capacitance

20 pF to 30 pF

It is good design practice to ground the case of the crystal

With tank circuit use 3rd overtone mode

Equivalent Resistance

75X to 20X

Power Dissipation (Min)

4 mW

2