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74LVC2G06 数据表(PDF) 2 Page - NXP Semiconductors |
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74LVC2G06 数据表(HTML) 2 Page - NXP Semiconductors |
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2 / 14 page ![]() 2004 Sep 10 2 Philips Semiconductors Product specification Inverters with open-drain outputs 74LVC2G06 FEATURES • Wide supply voltage range from 1.65 V to 5.5 V • 5 V tolerant input/output for interfacing with 5 V logic • High noise immunity • Complies with JEDEC standard: – JESD8-7 (1.65 V to 1.95 V) – JESD8-5 (2.3 V to 2.7 V) – JESD8B/JESD36 (2.7 V to 3.6 V). •−24 mA output drive (VCC = 3.0 V) • CMOS low power consumption • Latch-up performance exceeds 250 mA • Direct interface with TTL levels • Inputs accept voltages up to 5 V • Multiple package options • ESD protection: – HBM EIA/JESD22-A114-B exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V. • Specified from −40 °C to +85 °C and −40 °C to +125 °C. DESCRIPTION The 74LVC2G06 is a high-performance, low-power, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device in a mixed 3.3 V and 5 V environment. Schmitt trigger action at all inputs makes the circuit tolerant for slower input rise and fall time. This device is fully specified for partial power-down applications using Ioff. The Ioff circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74LVC2G06 provides two inverting buffers. The output of this device is an open drain and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions. QUICK REFERENCE DATA GND = 0 V; Tamb =25 °C. Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ ∑(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; ∑(CL × VCC2 × fo) = sum of the outputs. 2. The condition is VI = GND to VCC. SYMBOL PARAMETER CONDITIONS TYPICAL UNIT tPLZ/tPZL propagation delay input nA to output nY VCC = 1.8 V; CL = 30 pF; RL =1kΩ 3.2 ns VCC = 2.5 V; CL = 30 pF; RL = 500 Ω 2.0 ns VCC = 2.7 V; CL = 50 pF; RL = 500 Ω 2.6 ns VCC = 3.3 V; CL = 50 pF; RL = 500 Ω 2.3 ns VCC = 5.0 V; CL = 50 pF; RL = 500 Ω 1.6 ns CI input capacitance 2.5 pF CPD power dissipation capacitance per gate VCC = 3.3 V; notes 1 and 2 5.9 pF |
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