MMBR911L datasheet(2/5 Pages) ISC

部件名	MMBR911L

功能描述	isc Silicon NPN RF Transistor

PDF	5 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc RF Product Specification

isc website：www.iscsemi.cn

isc Silicon NPN RF Transistor

MMBR911L

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 1mA ; IB= 0

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 0.1mA ; IE= 0

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 0.1mA ; IC= 0

ICBO

Collector Cutoff Current

VCB= 15V; IE= 0

0.05

hFE

DC Current Gain

IC= 30mA ; VCE= 10V

200

COB

Output Capacitance

IE= 0 ; VCB= 10V; f= 1MHz

1.0

Current-Gain—Bandwidth Product

IC= 30mA ; VCE= 10V; f= 1GHz

6.0

GHz

GNF

Gain@ Noise Figure

IC= 10mA ; VCE= 10V; f= 0.5GHz

GNF

Gain@ Noise Figure

IC= 10mA ; VCE= 10V; f= 1GHz

Noise Figure

IC= 10mA ; VCE= 10V; f= 0.5GHz

2.0

Noise Figure

IC= 10mA ; VCE= 10V; f= 1GHz

2.9

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