BUL44 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc Silicon NPN Power Transistor

BUL44

ELECTRICAL CHARACTERISTICS

TC =25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 100mA; L= 25mH

400

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 0.4A ;IB= 40mA

IC= 0.4A ;IB= 40mA,TC= 125℃

0.5

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 1A ;IB= 0.2A

IC= 1A ;IB= 0.2A,TC= 125℃

0.6

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 0.4A ;IB= 40mA

1.1

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 1A ;IB= 0.2A

1.25

ICEO

Collector Cutoff Current

VCE= RatedVCEO; IB= 0

0.1

ICES

Collector Cutoff Current

VCE= RatedVCES;VEB=0

VCE= RatedVCES;VEB=0,TC= 125℃

VCE= 500V; VEB=0,TC= 125℃

0.1

0.5

0.1

IEBO

Emitter Cutoff Current

VEB= 9V; IC= 0

0.1

hFE-1

DC Current Gain

IC= 0.2 A; VCE= 5V

hFE-2

DC Current Gain

IC= 0.4A; VCE= 1V

hFE-3

DC Current Gain

IC= 1A; VCE= 1V

hFE-4

DC Current Gain

IC= 10mA; VCE= 5V

COB

Output Capacitance

IE= 0; VCB= 10V; f= 1MHz

Current-Gain—Bandwidth Product

IC= 0.5A; VCE= 10V

MHz

Switching Times , Resistive Load

ton

Turn-On Time

IC= 0.4A; VCC= 300V;

IB1= 40mA;IB2= 0.2A;

tp= 20μs; Duty Cycle≤10%

0.1

μs

toff

Turn-Off Time

2.5

μs

Storage Time

IC= 1A; VCC= 300V;

IB1= 0.2A; IB2= 0.5A;

tp= 20μs; Duty Cycle≤10%

0.15

μs

Fall Time

2.5

μs

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