U430 datasheet(1/1 Pages) INTERFET

部件名	U430

功能描述	Dual N-Channel Silicon Junction Field-Effect Transistor

PDF	1 Pages

Scroll/Zoom	100%

制造商	INTERFET [InterFET Corporation]

网页	http://www.interfet.com

标志

1 / 1 page

B-70

01/99

U430, U431

Dual N-Channel Silicon Junction Field-Effect Transistor

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Absolute maximum ratings at TA = 25¡C.

Total Device Dissipation (Derate 4 mW/°C to150°C)

500 mW

Storage Temperature Range

– 65°C to +150°C

Lead Temperature

300°C

TOÐ78 Package

Dimensions in Inches (mm)

Pin Configuration

1 Source 1, 2 Gate 1, Drain 1,

4 Case, 5 Drain 2, 6 Gate 2,

7 Source 2, 8 Omitted

At 25°C free air temperature:

U430

U431

Process NJ72

Static Electrical Characteristics

Min

Typ

Max

Min

Typ

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

V(BR)GSS

– 25

V

IG = – 1µA, VDS = ØV

Gate Reverse Current

IGSS

– 150

pA

VGS = – 15V, VDS = ØV

– 150

nA

VGS = – 15V, VDS = ØV

TA = 150°C

Gate Source Cutoff Voltage

VGS(OFF)

– 1– 4

– 2– 6

V

VDS = 10V, ID = 1 nA

Gate Source Forward Voltage

VGS(F)

11

V

VDS = ØV, IG = 10 mA

Drain Saturation Current (Pulsed)

IDSS

12

30

24

60

mA

VDS = 10V, VGS = ØV

Dynamic Electrical Characteristics

Common Source Forward

Gfs

10

17

10

17

mS

VDS = 10V, ID = 10 mA

f = 1 kHz

Transconductance

12

mS

VDS = 10V, ID = 10 mA

f = 100 MHz

Common Source Output Conductance

Gos

250

µS

VDS = 10V, ID = 10 mA

f = 1 kHz

0.15

µS

VDS = 10V, ID = 10 mA

f = 100 MHz

Drain Gate Capacitance

Cdg

55

pF

VDS = ØV, VGS = – 10V

f = 1 MHz

Source Gate Capacitance

Cgs

2.5

pF

VDS = ØV, VGS = – 10V

f = 1 MHz

Equivalent Short Circuit

¯eN

10

nV/

√Hz

VDS = 10V, ID = 10 mA

f = 100 kHz

Input Noise Voltage

Power Match Source Admittance

gig

12

VDS = 10V, ID = 10 mA

f = 100 MHz

Conversion Gain

Gc

33

dB

VDS = 20V, RL = 2 kΩ

f = 100 MHz

VGS = 1/2 VGS(OFF)

Saturation Drain Current Ratio

IDSS1/IDSS2 0.9

1

0.9

1

VDS = 10V, VG = ØV

Gate Source Cutoff Voltage Ratio

VGS(OFF)1

0.9

1

0.9

1

VDS = 10V, ID = 1 nA

VGS(OFF)2

Transconductance Ratio

gfs1/gfs2

0.9

1

0.9

1

VDS = 10V, ID = 10 mA

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

www.interfet.com

Databook.fxp

1/13/99 2:09 PM

Page B-70

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