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BUX47AFI 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUX47AFI 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor BUX47AFI ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH 450 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 30 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 2.5A 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.6 V ICER Collector Cutoff Current VCE= 850V; RBE= 10Ω VCE= 850V; RBE= 10Ω; TC=125℃ 0.4 3.0 mA ICEV Collector Cutoff Current VCE=850V; VBE= -2.5V VCE=850V; VBE= -2.5V; TC=125℃ 0.15 1.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA Switching times Resistive Load ton Turn-on Time IC= 5A; IB1=-IB2= 1A; VCC= 150V 0.7 μs ts Storage Time 3.0 μs tf Fall Time 0.8 μs |
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