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BUX77A 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 BUX77A
功能描述  isc Silicon NPN Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

BUX77A 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUX77A Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUX77A Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
2
isc Silicon NPN Power Transistor
BUX77A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 50mA; IB= 0
80
V
VCES
Collector-Emitter Voltage
IC= 2mA; VBE= 0
100
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
1.0
V
VBE(on)
Base-Emitter On Voltage
IC= 5A; IB= 0.5A
1.3
V
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0
10
μA
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
VCB= 80V; IE= 0, TC=150℃
0.5
150
μA
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
0.5
μA
hFE-1
DC Current Gain
IC= 0.5A; VCE= 5V
70
hFE-2
DC Current Gain
IC= 2A; VCE= 5V
50
120
hFE-3
DC Current Gain
IC= 5A; VCE= 5V
30
hFE-4
DC Current Gain
IC= 1A; VCE= 5V; TC= -40℃
25
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V
1.5
MHz
Switching Times
tr
Rise Time
IC= 5A; IB1= -IB2= 0.5A; VCC= 40V
0.2
μs
ts
Storage Time
2.0
μs
tf
Fall Time
0.2
μs



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