DS9638

SNLS389D – MAY 1998 – REVISED APRIL 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

Storage Temperature Range

Ceramic DIP

−65°C to +175°C

Molded DIP and SO-8

−65°C to +150°C

Lead Temperature

CDIP (Soldering, 60 sec.)

300°C

PDIP (Soldering, 10 sec.)

265°C

CDIP Package

1300 mW

PDIP Package

930 mW

SOIC Package

810 mW

−0.5V to 7V

Input Voltage

−0.5V to +7V

(1)

“Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be verified. They are not meant to imply

that the devices should be operated at these limits. The tables of “Electrical Characteristics provide conditions for actual device

operation.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(3)

Derate CDIP package 8.7 mW/°C above 25°C; derate PDIP package 7.5 mW/°C above 25°C; derate SOIC package 6.5 mW°C above

25°C.

Recommended Operating Conditions

DS9638M

DS9638C

Min

Typ

Max

Min

Typ

Max

Units

4.5

5.0

5.5

4.75

5.0

5.25

V

−50

−50

mA

50

40

50

mA

−55

25

125

0

25

70

°C

2

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