DMP4025LSD

Document Number: DS35937 Rev: 2 - 2

4 of 8

www.diodes.com

April 2013

© Diodes Incorporated

A Product Line of

Diodes Incorporated

DMP4025LSD

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-40





V

Zero Gate Voltage Drain Current





-1.0

µA



Gate-Source Leakage





100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-0.8

-1.3

-1.8

V

Static Drain-Source On-Resistance (Note 12)



18

25

mΩ

30

45

Forward Transconductance (Notes 12 & 13)



16.6



S

Diode Forward Voltage (Note 12)



-0.7

-1.0

V

DYNAMIC CHARACTERISTICS (Note 13)

Input Capacitance



1640



pF

f = 1MHz

Output Capacitance



179



Reverse Transfer Capacitance



128



Gate Resistance



6.43



Ω

Total Gate Charge (Note 14)



14.0



nC

Total Gate Charge (Note 14)



33.7



Gate-Source Charge (Note 14)



5.5



Gate-Drain Charge (Note 14)



7.3



Turn-On Delay Time (Note 14)



6.9



ns

Turn-On Rise Time (Note 14)



14.7



Turn-Off Delay Time (Note 14)



53.7



Turn-Off Fall Time (Note 14)



30.9



Notes:

12. Measured under pulsed conditions. Pulse width

 300µs; duty cycle  2%

13. For design aid only, not subject to production testing.

14. Switching characteristics are independent of operating junction temperatures.

Typical Characteristics

0

0.5

1

1.5

2

Fig. 1 Typical Output Characteristic

-V , DRAIN-SOURCE VOLTAGE (V)

DS

0

5

10

15

20

25

30

01

2

3

45

Fig. 2 Typical Transfer Characteristic

-V , GATE-SOURCE VOLTAGE (V)

GS

0

5

10

15

20

25

30

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= -5V

DS