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DMP4025LSDQ-13 数据表(PDF) 2 Page - Diodes Incorporated

部件名 DMP4025LSDQ-13
功能描述  DMP4025LSS-13
PDF  8 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

DMP4025LSDQ-13 数据表(HTML) 2 Page - Diodes Incorporated

  DMP4025LSDQ-13 Datasheet HTML 1Page - Diodes Incorporated DMP4025LSDQ-13 Datasheet HTML 2Page - Diodes Incorporated DMP4025LSDQ-13 Datasheet HTML 3Page - Diodes Incorporated DMP4025LSDQ-13 Datasheet HTML 4Page - Diodes Incorporated DMP4025LSDQ-13 Datasheet HTML 5Page - Diodes Incorporated DMP4025LSDQ-13 Datasheet HTML 6Page - Diodes Incorporated DMP4025LSDQ-13 Datasheet HTML 7Page - Diodes Incorporated DMP4025LSDQ-13 Datasheet HTML 8Page - Diodes Incorporated  
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DMP4025LSD
Document Number: DS35937 Rev: 2 - 2
2 of 8
www.diodes.com
April 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP4025LSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-40
V
Gate-Source Voltage
VGSS
20
Continuous Drain Current
VGS = -10V
(Notes 7 & 9)
ID
-7.6
A
TA = +70°C (Notes 7 & 9)
-6.1
(Notes 6 & 9)
-5.8
(Notes 6 & 10)
-6.9
Pulsed Drain Current
VGS = -10V
(Notes 8 & 9)
IDM
-28.0
Continuous Source Current (Body diode)
(Notes 7 & 9)
IS
-3.0
Pulsed Source Current (Body diode)
(Notes 8 & 9)
ISM
-28.0
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
(Notes 6 & 9)
PD
1.25
10
W
mW/°C
(Notes 6 & 10)
1.8
14.3
(Notes 7 & 9)
2.14
17.2
Thermal Resistance, Junction to Ambient
(Notes 6 & 9)
RθJA
100
°C/W
(Notes 6 & 10)
70
(Notes 7 & 9)
58
Thermal Resistance, Junction to Lead
(Notes 9 & 11)
RθJL
51
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes:
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note (2), except the device is measured at t
 10 sec.
8. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs.
9. For a dual device with one active die.
10. For a device with two active die running at equal power.
11. Thermal resistance from junction to solder-point (at the end of the drain lead).



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