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CPC3701 数据表(PDF) 2 Page - IXYS Corporation |
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CPC3701 数据表(HTML) 2 Page - IXYS Corporation |
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2 / 5 page ![]() INTEGRATED CIRCUITS DIVISION www.ixysic.com 2 R06 CPC3701 Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Absolute Maximum Ratings @ 25ºC Electrical Characteristics @ 25ºC (Unless Otherwise Noted) Parameter Ratings Units Drain-to-Source Voltage 60 V P Gate-to-Source Voltage ±15 V P Pulsed Drain Current 1 A Total Package Dissipation 1 1.1 W Operational Temperature -55 to +125 ºC Storage Temperature -55 to +125 ºC 1 Mounted on 1"x1" FR4 board. Parameter Symbol Conditions Min Typ Max Units Drain-to-Source Breakdown Voltage V (BR)DSX V GS= -5.5V, ID=100µA 60 - - V Gate-to-Source Off Voltage V GS(off) V DS= 5V, ID=1A -1.4 - -3.1 V Change in V GS(off) with Temperature dV GS(off) /dT V DS= 5V, ID=1A - - 4.5 mV/ºC Gate Body Leakage Current I GSS V GS=±15V, VDS=0V - - 100 nA Drain-to-Source Leakage Current I D(off) V GS= -5.5V, VDS=60V - - 1 µA V GS= -5V, VDS=40V, TA=125ºC - - 1 mA Saturated Drain-to-Source Current I DSS V GS= 0V, VDS=15V 600 - - mA Static Drain-to-Source On-State Resistance R DS(on) V GS= 0V, ID=300mA -- 1 Change in R DS(on) with Temperature dR DS(on) /dT - - 1.1 %/ºC Turn-On Delay Time t d(on) V DS= 25V I D= 300mA V GS= 0V to -10V R gen= 50 - -70 ns Rise Time t r -40 Turn-Off Delay Time t d(off) -50 Fall Time t f - 150 Source-Drain Diode Voltage Drop V SD V GS= -5V, ISD=300mA - 0.6 1.8 V Thermal Resistance (Junction to Ambient) RJA - - 90 - ºC/W Switching Waveform & Test Circuit 90% 10% 90% 90% 10% 10% PULSE GENERATOR V DD RL OUTPUT D.U.T. ton td(on) toff td(off) INPUT INPUT OUTPUT 0V V DS Rgen 0V -10V tf tr |
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